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Subject[PATCH 09/14] thermal: exynos: remove parsing of samsung,tmu_reference_voltage property
Date
Since pdata reference_voltage values are SoC (not platform) specific
just move it from platform data to struct exynos_tmu_data instance.
Then remove parsing of samsung,tmu_reference_voltage property.

There should be no functional changes caused by this patch.

Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com>
---
drivers/thermal/samsung/exynos_tmu.c | 18 +++++++++++++++---
drivers/thermal/samsung/exynos_tmu.h | 4 ----
2 files changed, 15 insertions(+), 7 deletions(-)

diff --git a/drivers/thermal/samsung/exynos_tmu.c b/drivers/thermal/samsung/exynos_tmu.c
index 9a0e961..6db6ef6 100644
--- a/drivers/thermal/samsung/exynos_tmu.c
+++ b/drivers/thermal/samsung/exynos_tmu.c
@@ -123,6 +123,8 @@

#define EXYNOS5433_PD_DET_EN 1

+#define EXYNOS5433_G3D_BASE 0x10070000
+
/*exynos5440 specific registers*/
#define EXYNOS5440_TMU_S0_7_TRIM 0x000
#define EXYNOS5440_TMU_S0_7_CTRL 0x020
@@ -190,6 +192,9 @@
* @max_efuse_value: maximum valid trimming data
* @temp_error1: fused value of the first point trim.
* @temp_error2: fused value of the second point trim.
+ * @reference_voltage: reference voltage of amplifier
+ * in the positive-TC generator block
+ * 0 < reference_voltage <= 31
* @regulator: pointer to the TMU regulator structure.
* @reg_conf: pointer to structure to register with core thermal.
* @ntrip: number of supported trip points.
@@ -214,6 +219,7 @@ struct exynos_tmu_data {
u32 min_efuse_value;
u32 max_efuse_value;
u16 temp_error1, temp_error2;
+ u8 reference_voltage;
struct regulator *regulator;
struct thermal_zone_device *tzd;
unsigned int ntrip;
@@ -369,7 +375,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT);

con &= ~(EXYNOS_TMU_REF_VOLTAGE_MASK << EXYNOS_TMU_REF_VOLTAGE_SHIFT);
- con |= pdata->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
+ con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;

con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
@@ -1136,8 +1142,6 @@ static int exynos_of_sensor_conf(struct device_node *np,

ret = of_property_read_u32(np, "samsung,tmu_gain", &value);
pdata->gain = (u8)value;
- of_property_read_u32(np, "samsung,tmu_reference_voltage", &value);
- pdata->reference_voltage = (u8)value;

of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);

@@ -1192,6 +1196,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_read = exynos4210_tmu_read;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+ data->reference_voltage = 7;
data->efuse_value = 55;
data->min_efuse_value = 40;
data->max_efuse_value = 100;
@@ -1208,6 +1213,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+ data->reference_voltage = 16;
data->efuse_value = 55;
if (data->soc != SOC_ARCH_EXYNOS5420 &&
data->soc != SOC_ARCH_EXYNOS5420_TRIMINFO)
@@ -1223,6 +1229,10 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+ if (res.start == EXYNOS5433_G3D_BASE)
+ data->reference_voltage = 23;
+ else
+ data->reference_voltage = 16;
data->efuse_value = 75;
data->min_efuse_value = 40;
data->max_efuse_value = 150;
@@ -1234,6 +1244,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos5440_tmu_set_emulation;
data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
data->ntrip = 4;
+ data->reference_voltage = 16;
data->efuse_value = 0x5d2d;
data->min_efuse_value = 16;
data->max_efuse_value = 76;
@@ -1245,6 +1256,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+ data->reference_voltage = 17;
data->efuse_value = 75;
data->min_efuse_value = 15;
data->max_efuse_value = 100;
diff --git a/drivers/thermal/samsung/exynos_tmu.h b/drivers/thermal/samsung/exynos_tmu.h
index 4c49312..9f4318c 100644
--- a/drivers/thermal/samsung/exynos_tmu.h
+++ b/drivers/thermal/samsung/exynos_tmu.h
@@ -42,16 +42,12 @@ enum soc_type {
* struct exynos_tmu_platform_data
* @gain: gain of amplifier in the positive-TC generator block
* 0 < gain <= 15
- * @reference_voltage: reference voltage of amplifier
- * in the positive-TC generator block
- * 0 < reference_voltage <= 31
* @cal_type: calibration type for temperature
*
* This structure is required for configuration of exynos_tmu driver.
*/
struct exynos_tmu_platform_data {
u8 gain;
- u8 reference_voltage;

u32 cal_type;
};
--
1.9.1
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